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| STGB10NB37LZ N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMeshTM IGBT TYPE STGB10NB37LZ s s s s s s VCES CLAMPED VCE(sat) < 1.8 V IC 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE 3 1 D2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH TM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s AUTOMOTIVE IGNITION ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC ICM PTOT ESD Tstg Tj June 2001 Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuos) at TC = 100C Collector Current (pulse width < 100s) Total Dissipation at TC = 25C Derating Factor ESD (Human Body Model) Storage Temperature Max. Operating Junction Temperature Value CLAMPED 18 CLAMPED 20 60 125 0.83 4 -65 to 175 175 Unit V V V A A W W/C KV C C 1/10 STGB10NB37LZ THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ 1.2 62.5 0.2 C/W C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol BV(CES) BV(ECR) BVGE ICES IGES RGE Parameter Clamped Voltage Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Emitter Resistance Test Conditions IC = 2 mA, VGE = 0, Tj= - 40C to 150C IEC = 75 mA, VGE = 0, Tj= - 40C to 150C IG = 2 mA Tj= - 40C to 150C VCE = 15 V, VGE =0 ,Tj =150 C VCE =200 V, VGE=0 ,TC =150C VGE = 10V , VCE = 0 20 Min. 375 18 12 16 10 100 700 Typ. 400 Max. 425 Unit V V V A A A K ON (1) Symbol VGE(th) VCE(SAT) IC Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Collector Current Test Conditions VCE = VGE, IC = 250A, Tj= - 40C to 150C VGE =4.5V, IC = 10 A, Tj= 25C VGE =4.5V, IC = 10 A, Tc= -40C VGE = 4.5V, VCE = 9 V 20 Min. 0.6 1.2 1.3 Typ. Max. 2.4 1.8 Unit V V V A DYNAMIC Symbol gfs Cies Coes Cres Qg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge VCE = 320V, IC = 10 A, VGE = 5V Test Conditions VCE = 15 V , IC =20 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 18 1250 103 18 28 Max. Unit S pF pF pF nC 2/10 STGB10NB37LZ FUNCTIONAL CHARACTERISTICS Symbol IL Parameter Latching Current Test Conditions VClamp = 320 V, TC = 125 C RGOFF = 1K , VGE = 5 V L = 300H RGOFF = 1K , L = 1.6 mH , Tc= 125C, Vcc = 30V Min. 20 Typ. Max. Unit A U.I.S. Unclamped Inductive Switching Current 15 A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 320 V, IC = 10 A RG = 1K , VGE = 5 V VCC= 320 V, IC = 10 A RG=1K, VGE = 5 V Min. Typ. 520 340 17 180 Max. Unit ns ns A/s J SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) tc tr(Voff) td(off) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Vclamp = 320 V, IC = 10 A, RGE = 1K , VGE = 5 V Tj = 125 C Test Conditions Vclamp = 320 V, IC = 10 A, RGE = 1K , VGE = 5 V Min. Typ. 4 2.2 14.8 1.5 4.0 5.2 2.8 15.8 2 6.5 Max. Unit s s s s mJ s s s s mJ (q)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail Normalized Transient Thermal Impedance 3/10 STGB10NB37LZ Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temp. Transconductance Normalized Collector-Emitter On Voltage vs Temperature Normalized Collector-Emitter On Voltage vs Gate-Emitter Voltage 4/10 STGB10NB37LZ Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Losses vs Gate Resistance Off Losses vs Collector Current Normalized Break-down Voltage vs Temp. Clamping Voltage vs Gate Resistance 5/10 STGB10NB37LZ Self Clamped Inductive Switching IMAX vs Open Secondary Coil 6/10 STGB10NB37LZ Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit 7/10 STGB10NB37LZ D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 8/10 3 1 STGB10NB37LZ D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 9/10 STGB10NB37LZ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 10/10 |
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